SSM5H16 Series
Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
Manufacturer: Toshiba Semiconductor and Storage
Catalog
Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
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Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)
| Part | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Package / Case | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Operating Temperature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 12 V | 1.9 A | N-Channel | UFV | 30 V | 1.8 V 4 V | 1 V | 123 pF | Schottky Diode (Isolated) | 6-SMD (5 Leads) Flat Leads | MOSFET (Metal Oxide) | 1.9 nC | Surface Mount | 150 °C | 500 mW |