Discrete Semiconductor Products

B125C800DM-E3/45

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BRIDGE RECT 1P 200V 900MA DFM

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Discrete Semiconductor Products

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BRIDGE RECT 1P 200V 900MA DFM

Technical Specifications

Parameters and characteristics for this part

Specification	B125C800DM-E3/45

Current - Average Rectified (Io)	900 mA
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	4-EDIP (0.300", 7.62mm)
Supplier Device Package	DFM
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V
Voltage - Peak Reverse (Max) [Max]	200 V

Part	Current - Reverse Leakage @ Vr	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - Peak Reverse (Max) [Max]	Diode Type	Package / Case	Current - Average Rectified (Io)	Supplier Device Package
Vishay General Semiconductor - Diodes Division B125C1000G-E4/51	10 µA	Standard	-40 °C	125 ¯C	1 V	Through Hole	200 V	Single Phase	4-Circular WOG	1 A	WOG
Vishay General Semiconductor - Diodes Division B125C800DM-E3/45	10 µA	Standard	-40 °C	125 ¯C	1 V	Through Hole	200 V	Single Phase	4-EDIP (0.300" 7.62mm)	900 mA	DFM
Vishay General Semiconductor - Diodes Division B125C1500G-E4/51	10 µA	Standard	-40 °C	125 ¯C	1 V	Through Hole	200 V	Single Phase	4-Circular WOG	1.5 A	WOG
Vishay General Semiconductor - Diodes Division B125C800G-E4/51	10 µA	Standard	-40 °C	125 ¯C	1 V	Through Hole	200 V	Single Phase	4-Circular WOG	900 mA	WOG

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	5000	$ 0.24

General part information

Bridge Rectifier Single Phase Standard 200 V Through Hole DFM

Technical documentation and resources