B125C1000G-E4/51

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BRIDGE RECT 1PHASE 200V 1A WOG

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Discrete Semiconductor Products

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BRIDGE RECT 1PHASE 200V 1A WOG

Technical Specifications

Parameters and characteristics for this part

Specification	B125C1000G-E4/51

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	4-Circular, WOG
Supplier Device Package	WOG
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V
Voltage - Peak Reverse (Max) [Max]	200 V

Part	Current - Reverse Leakage @ Vr	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - Peak Reverse (Max) [Max]	Diode Type	Package / Case	Current - Average Rectified (Io)	Supplier Device Package
Vishay General Semiconductor - Diodes Division B125C1000G-E4/51	10 µA	Standard	-40 °C	125 ¯C	1 V	Through Hole	200 V	Single Phase	4-Circular WOG	1 A	WOG
Vishay General Semiconductor - Diodes Division B125C800DM-E3/45	10 µA	Standard	-40 °C	125 ¯C	1 V	Through Hole	200 V	Single Phase	4-EDIP (0.300" 7.62mm)	900 mA	DFM
Vishay General Semiconductor - Diodes Division B125C1500G-E4/51	10 µA	Standard	-40 °C	125 ¯C	1 V	Through Hole	200 V	Single Phase	4-Circular WOG	1.5 A	WOG
Vishay General Semiconductor - Diodes Division B125C800G-E4/51	10 µA	Standard	-40 °C	125 ¯C	1 V	Through Hole	200 V	Single Phase	4-Circular WOG	900 mA	WOG

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 200 V Through Hole WOG

Technical documentation and resources