Discrete Semiconductor Products

GT60N321(Q)

Obsolete

IGBT 1000V 60A 170W TO3P LH

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT 1000V 60A 170W TO3P LH

Technical Specifications

Parameters and characteristics for this part

Specification	GT60N321(Q)

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power - Max [Max]	170 W
Reverse Recovery Time (trr)	2.5 µs
Supplier Device Package	TO-3P(LH)
Td (on/off) @ 25°C [custom]	330 ns
Td (on/off) @ 25°C [custom]	700 ns
Vce(on) (Max) @ Vge, Ic [Max]	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1000 V

Part	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Power - Max [Max]	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Supplier Device Package	Mounting Type	Operating Temperature
Toshiba Semiconductor and Storage GT60N321(Q)	330 ns	700 ns	170 W	2.5 µs	1000 V	TO-3PL	2.8 V	60 A	120 A	TO-3P(LH)	Through Hole	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT 1000 V 60 A 170 W Through Hole TO-3P(LH)

Technical documentation and resources

No documents available