GT60N321 Series

Catalog

IGBT 1000V 60A 170W TO3P LH

Part	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Power - Max [Max]	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Supplier Device Package	Mounting Type	Operating Temperature
Toshiba Semiconductor and Storage GT60N321(Q)	330 ns	700 ns	170 W	2.5 µs	1000 V	TO-3PL	2.8 V	60 A	120 A	TO-3P(LH)	Through Hole	150 °C