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STB13NK60ZT4
Discrete Semiconductor Products

STB13NK60ZT4

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STMicroelectronics

N-CHANNEL 600 V, 0.48 OHM TYP., 13 A SUPERMESH POWER MOSFET IN D2PAK PACKAGE

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STB13NK60ZT4
Discrete Semiconductor Products

STB13NK60ZT4

Active
STMicroelectronics

N-CHANNEL 600 V, 0.48 OHM TYP., 13 A SUPERMESH POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB13NK60ZT4
Current - Continuous Drain (Id) @ 25°C13 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs92 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2030 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs550 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 653$ 4.12

Description

General part information

STB13NK60ZT4 Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.