Specification	NVATS4A102PZT4G

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1490 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	18.5 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

NVATS4A101PZ Series

P-Channel Power MOSFET, -30V, -44A, 18.5mΩ,

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NVATS4A101PZT4G	18.5 nC	Automotive	30 mOhm	Surface Mount	-55 °C	175 ░C	AEC-Q101	2.6 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	30 V	36 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	ATPAK
ON Semiconductor NVATS4A102PZT4G		Automotive	18.5 mOhm	Surface Mount	-55 °C	175 ░C	AEC-Q101	2.6 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	30 V	48 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	ATPAK	1490 pF	44 A	34 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVATS4A101PZ Series

The NVATS4A101PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.