NVATS4A101PZ Series

P-Channel Power MOSFET, -30V, -44A, 18.5mΩ,

Catalog

P-Channel Power MOSFET, -30V, -44A, 18.5mΩ,

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NVATS4A101PZT4G	18.5 nC	Automotive	30 mOhm	Surface Mount	-55 °C	175 ░C	AEC-Q101	2.6 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	30 V	36 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	ATPAK
ON Semiconductor NVATS4A102PZT4G		Automotive	18.5 mOhm	Surface Mount	-55 °C	175 ░C	AEC-Q101	2.6 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	30 V	48 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	ATPAK	1490 pF	44 A	34 nC

Catalog

P-Channel Power MOSFET, -30V, -44A, 18.5mΩ,

Key Features

• Low On-Resistance

• High Current Capability

• 100% avalanche tested

• AEC-Q101 qualified and PPAP capable

• ATPAK package is pin-compatible with DPAK(TO-252)

• RoHS compliance

Description

The NVATS4A101PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.