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APTGFQ25H120T2G
Discrete Semiconductor Products

APTGFQ25H120T2G

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Microsemi Corporation

IGBT MODULE 1200V 40A 227W SP2

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APTGFQ25H120T2G
Discrete Semiconductor Products

APTGFQ25H120T2G

Active
Microsemi Corporation

IGBT MODULE 1200V 40A 227W SP2

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTGFQ25H120T2G
ConfigurationFull Bridge
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Cutoff (Max) [Max]250 µA
IGBT TypeNPT and Fieldstop
InputStandard
Input Capacitance (Cies) @ Vce2.02 nF
Mounting TypeThrough Hole
NTC ThermistorTrue
Package / CaseSP2
Power - Max [Max]227 W
Supplier Device PackageSP2
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

APTGFQ25 Series

IGBT Module NPT and Fieldstop Full Bridge 1200 V 40 A 227 W Through Hole SP2

Documents

Technical documentation and resources