Discrete Semiconductor Products

2N6233

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POWER BJT TO-66 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

POWER BJT TO-66 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	2N6233

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25 hFE
Mounting Type	Through Hole
Package / Case	TO-66-2, TO-213AA
Power - Max [Max]	50 W
Supplier Device Package	TO-66
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	225 V

Part	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector (Ic) (Max)	Mounting Type	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Microchip Technology 2N6233	2.5 V	50 W	5 A	Through Hole	TO-213AA TO-66-2	TO-66	1 mA	25 hFE	NPN	225 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 42.30
Newark	Each	100	$ 42.30
		500	$ 40.65

General part information

Bipolar (BJT) Transistor NPN 225 V 5 A 50 W Through Hole TO-66

Technical documentation and resources