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STTH1210DY
Discrete Semiconductor Products

STTH1210DY

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STMicroelectronics

AUTOMOTIVE 1000 V, 12 A ULTRAFAST DIODE

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DocumentsAN5088+3
STTH1210DY
Discrete Semiconductor Products

STTH1210DY

Active
STMicroelectronics

AUTOMOTIVE 1000 V, 12 A ULTRAFAST DIODE

Deep-Dive with AI

DocumentsAN5088+3

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH1210DY
Current - Average Rectified (Io)12 A
Current - Reverse Leakage @ Vr10 çA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-220-2
QualificationAEC-Q101
Reverse Recovery Time (trr)90 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If [Max]2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 2.08

Description

General part information

STTH1210-Y Series

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability, like automotive applications.

These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.