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MASTERGAN4L
Integrated Circuits (ICs)

MASTERGAN4L

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STMicroelectronics

600 V HALF-BRIDGE ENHANCEMENT MODE GAN HEMT WITH HIGH VOLTAGE DRIVER

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MASTERGAN4L
Integrated Circuits (ICs)

MASTERGAN4L

Active
STMicroelectronics

600 V HALF-BRIDGE ENHANCEMENT MODE GAN HEMT WITH HIGH VOLTAGE DRIVER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMASTERGAN4L
ApplicationsGeneral Purpose
Current - Output / Channel6.5 A
Current - Peak Output12 A
Fault ProtectionOver Temperature, UVLO
FeaturesBootstrap Circuit
InterfaceLogic
Load TypeCapacitive, Inductive, Resistive
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case31-VQFN Exposed Pad
Rds On (Typ)225 mOhm
Supplier Device Package31-QFN (9x9)
TechnologyMOSFET (Metal Oxide)
Voltage - Load [Max]520 V
Voltage - Supply [Max]9.5 V
Voltage - Supply [Min]4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 3.29
Tray 1560$ 3.66

Description

General part information

MASTERGAN4L Series

The MASTERGAN4L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.

The integrated power GaNs have respectively RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN4L features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.