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STMICROELECTRONICS STGW30M65DF2
Discrete Semiconductor Products

STGW60V60F

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 60 A VERY HIGH SPEED

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STMICROELECTRONICS STGW30M65DF2
Discrete Semiconductor Products

STGW60V60F

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 60 A VERY HIGH SPEED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW60V60F
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)240 A
Gate Charge334 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]375 W
Supplier Device PackageTO-247-3
Switching Energy750 µJ, 550 µJ
Td (on/off) @ 25°C60 ns, 208 ns
Test Condition4.7 Ohm, 60 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 441$ 4.81
MouserN/A 1$ 4.87
10$ 4.57
25$ 2.87
100$ 2.37
250$ 2.01
600$ 1.88

Description

General part information

STGW60V60F Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.