Discrete Semiconductor Products

SIHA120N60E-GE3

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MOSFET N-CH 600V 25A TO220

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Discrete Semiconductor Products

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MOSFET N-CH 600V 25A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA120N60E-GE3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1562 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	34 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIHA120N60E-GE3	30 V	45 nC	120 mOhm	34 W	1562 pF	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220 Full Pack	N-Channel	10 V	25 A	5 V	TO-220-3 Full Pack	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 25A (Tc) 34W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources