SIHA120 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 25A TO220
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 45 nC | 120 mOhm | 34 W | 1562 pF | Through Hole | MOSFET (Metal Oxide) | -55 °C | 150 °C | TO-220 Full Pack | N-Channel | 10 V | 25 A | 5 V | TO-220-3 Full Pack | 600 V |