Discrete Semiconductor Products

2N7002W-G

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MOSFET N-CH 60V 0.115A SOT323

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Discrete Semiconductor Products

Active

MOSFET N-CH 60V 0.115A SOT323

Technical Specifications

Parameters and characteristics for this part

Specification	2N7002W-G

Current - Continuous Drain (Id) (Ta)	115 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max)	50 pF, 50 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-70, SOT-323
Package Name	SOT-323
Power Dissipation (Max)	200 mW
Rds On (Max)	5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Rds On (Max)	Mounting Type	Technology	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Operating Temperature
Comchip Technology 2N7002W-G	60 V	10 V	5 V	SOT-323	115 mA	200 mW	5 Ohm	Surface Mount	MOSFET (Metal Oxide)	N-Channel	20 V	50 pF 50 pF	SC-70 SOT-323	2.5 V	-55 °C	150 °C
Comchip Technology 2N7002W-HF	60 V	10 V	5 V	SOT-323	115 mA	200 mW	5 Ohm	Surface Mount	MOSFET (Metal Oxide)	N-Channel	20 V	50 pF 50 pF	SC-70 SOT-323	2.5 V			150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount SOT-323

Technical documentation and resources

No documents available