Discrete Semiconductor Products

SI8497DB-T2-E1

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MOSFET P-CH 30V 13A 6MICROFOOT

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Discrete Semiconductor Products

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MOSFET P-CH 30V 13A 6MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8497DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	1320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFBGA
Power Dissipation (Max)	13 W, 2.77 W
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	6-microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.1 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI8497DB-T2-E1	6-UFBGA	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	P-Channel	1.1 V	12 V	10 V 49 nC	13 A	2.77 W 13 W	1320 pF	2 V	4.5 V	6-microfoot	53 mOhm	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 13A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot

Technical documentation and resources