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Technical Specifications
Parameters and characteristics for this part
| Specification | JANSF2N6987 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | 14-DIP |
| Package / Case [x] | 0.3 " |
| Package / Case [y] | 7.62 mm |
| Power - Max [Max] | 1.5 W |
| Qualification | MIL-PRF-19500/558 |
| Supplier Device Package | TO-116 |
| Transistor Type | 4 PNP (Quad) |
| Vce Saturation (Max) @ Ib, Ic | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 50 | $ 180.25 | |
Description
General part information
JANTXV2N6987U-Quad-Transistor Series
This specification covers the performance requirements for PNP, silicon, switching, 2N6987 and 2N6988 unitized transistors, four independent 2N2907A transistor chip array. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/558. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.
Documents
Technical documentation and resources
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