Discrete Semiconductor Products

SIHF9630S-GE3

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MOSFET P-CH 200V 6.5A D2PAK

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Discrete Semiconductor Products

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MOSFET P-CH 200V 6.5A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF9630S-GE3

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3 W, 74 W
Rds On (Max) @ Id, Vgs [Max]	800 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Vgs (Max)	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHF9630S-GE3	Surface Mount	20 V	MOSFET (Metal Oxide)	3 W 74 W	200 V	800 mOhm	700 pF	29 nC	TO-263 (D2PAK)	6.5 A	-55 °C	150 °C	10 V	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V

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General part information

P-Channel 200 V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources