SIHF9630 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 6.5A D2PAK
| Part | Mounting Type | Vgs (Max) | Technology | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 20 V | MOSFET (Metal Oxide) | 3 W 74 W | 200 V | 800 mOhm | 700 pF | 29 nC | TO-263 (D2PAK) | 6.5 A | -55 °C | 150 °C | 10 V | P-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V |