Discrete Semiconductor Products

SI9934BDY-T1-E3

Obsolete

MOSFET 2P-CH 12V 4.8A 8SOIC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 12V 4.8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI9934BDY-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs [Max]	35 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	FET Feature	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Configuration	Technology
Vishay General Semiconductor - Diodes Division SI9934BDY-T1-E3	Surface Mount	4.8 A	12 V	1.4 V	20 nC	8-SOIC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	35 mOhm	1.1 W	2 P-Channel	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI9934BDY-T1-GE3	Surface Mount	4.8 A	12 V	1.4 V	20 nC	8-SOIC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	35 mOhm	1.1 W	2 P-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 12V 4.8A 1.1W Surface Mount 8-SOIC

Technical documentation and resources

No documents available