SI9934 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2P-CH 12V 4.8A 8SOIC
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | FET Feature | Rds On (Max) @ Id, Vgs [Max] | Power - Max [Max] | Configuration | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 4.8 A | 12 V | 1.4 V | 20 nC | 8-SOIC | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 35 mOhm | 1.1 W | 2 P-Channel | MOSFET (Metal Oxide) |
Vishay General Semiconductor - Diodes Division | Surface Mount | 4.8 A | 12 V | 1.4 V | 20 nC | 8-SOIC | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 35 mOhm | 1.1 W | 2 P-Channel | MOSFET (Metal Oxide) |