Discrete Semiconductor Products

MPSW42

Obsolete

TRANS NPN 300V 0.5A TO92

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Discrete Semiconductor Products

Obsolete

TRANS NPN 300V 0.5A TO92

Technical Specifications

Parameters and characteristics for this part

Specification	MPSW42

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

1.0 W High Voltage NPN Bipolar Transistor

Part	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Package / Case	Supplier Device Package	Supplier Device Package	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]
ON Semiconductor MPSW42	500 mA	Through Hole	40	500 mV	300 V	50 MHz	TO-226-3 TO-92-3 Long Body	TO-92	TO-226	NPN	100 nA	-55 °C	150 °C	1 W
ON Semiconductor MPSW42RLRA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the TO-92 package.

Technical documentation and resources