1.0 W High Voltage NPN Bipolar Transistor
1.0 W High Voltage NPN Bipolar Transistor
| Part | Current - Collector (Ic) (Max) [Max] | Mounting Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Package / Case | Supplier Device Package | Supplier Device Package | Transistor Type | Current - Collector Cutoff (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 500 mA | Through Hole | 40 | 500 mV | 300 V | 50 MHz | TO-226-3 TO-92-3 Long Body | TO-92 | TO-226 | NPN | 100 nA | -55 °C | 150 °C | 1 W |
ON Semiconductor |