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STD5N60DM2
Discrete Semiconductor Products

STD5N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 1.38 OHM TYP., 3.5 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

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STD5N60DM2
Discrete Semiconductor Products

STD5N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 1.38 OHM TYP., 3.5 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD5N60DM2
Current - Continuous Drain (Id) @ 25°C3.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds375 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs1.55 Ohm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 522$ 0.68
NewarkEach (Supplied on Cut Tape) 1$ 0.82
10$ 0.73
25$ 0.67
50$ 0.62
100$ 0.56
250$ 0.53
500$ 0.50
1000$ 0.48

Description

General part information

STD5N60DM2 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.