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GD25LD40EK6IGR
Integrated Circuits (ICs)

GD25LD40EK6IGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/DUAL 6USON

GD25LD40EK6IGR
Integrated Circuits (ICs)

GD25LD40EK6IGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/DUAL 6USON

Technical Specifications

Parameters and characteristics for this part

SpecificationGD25LD40EK6IGR
Access Time12 ns
Clock Frequency50 MHz
Memory Depth512 K
Memory FormatFLASH
Memory Interface (Type)SPI - Dual I/O
Memory Size4 Mbit
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case6-XFDFN
Package Length1.2 mm
Package Name6-USON
Package Width1.2 mm
TechnologyFLASH - NOR (SLC)
Voltage - Supply (Maximum)2 V
Voltage - Supply (Minimum)1.65 V
Write Cycle Time - Page6 ms
Write Cycle Time - Word100 µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 9000$ 0.33<5d

CAD

3D models and CAD resources for this part

Description

General part information

GD25LD40 Series

FLASH - NOR (SLC) Memory IC 4Mbit SPI - Dual I/O 50 MHz 12 ns 6-USON (1.2x1.2)

Documents

Technical documentation and resources

No documents available