GD25LD40 Series

Manufacturer: GigaDevice Semiconductor (HK) Limited

Catalog

IC FLASH 4MBIT SPI/DUAL 6USON

Part	Memory Size	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Memory Format	Access Time	Clock Frequency	Write Cycle Time - Word	Write Cycle Time - Page	Mounting Type	Package Name	Package Width	Package Length	Memory Interface (Type)	Memory Type	Memory Width	Memory Depth	Operating Temperature (Max)	Operating Temperature (Min)	Package / Case	Technology
GigaDevice Semiconductor (HK) Limited GD25LD40EK6IGR	4 Mbit	1.65 V	2 V	FLASH	12 ns	50 MHz	100 µs	6 ms	Surface Mount	6-USON	1.2 mm	1.2 mm	SPI - Dual I/O	Non-Volatile	8 bit	512 K	85 °C	-40 °C	6-XFDFN	FLASH - NOR (SLC)
GigaDevice Semiconductor (HK) Limited GD25LD40CTIGR	4 Mbit	1.65 V	2 V	FLASH		50 MHz	97 µs	6 ms	Surface Mount	8-SOIC 8-SOP	3.9 mm	0.154 in	SPI - Dual I/O	Non-Volatile	8 bit	512 K	85 °C	-40 °C		FLASH - NOR
GigaDevice Semiconductor (HK) Limited GD25LD40CKIGR	4 Mbit	1.65 V	2 V	FLASH	12 ns	50 MHz	97 µs	6 ms	Surface Mount	8-USON	1.5 mm	1.5 mm	SPI - Dual I/O	Non-Volatile	8 bit	512 K	85 °C	-40 °C	8-XFDFN Exposed Pad	FLASH - NOR (SLC)
GigaDevice Semiconductor (HK) Limited GD25LD40EEIGR	4 Mbit	1.65 V	2 V	FLASH	12 ns	50 MHz	100 µs	6 ms	Surface Mount	8-USON	2 mm	3 mm	SPI - Dual I/O	Non-Volatile	8 bit	512 K	85 °C	-40 °C	8-XFDFN Exposed Pad	FLASH - NOR (SLC)
GigaDevice Semiconductor (HK) Limited GD25LD40EKIGR	4 Mbit	1.65 V	2 V	FLASH	12 ns	50 MHz	100 µs	6 ms	Surface Mount	8-USON	1.5 mm	1.5 mm	SPI - Dual I/O	Non-Volatile	8 bit	512 K	85 °C	-40 °C	8-XFDFN Exposed Pad	FLASH - NOR (SLC)
GigaDevice Semiconductor (HK) Limited GD25LD40CEIGR	4 Mbit	1.65 V	2 V	FLASH		50 MHz	97 µs	6 ms	Surface Mount	8-USON	3 mm	2 mm	SPI - Dual I/O	Non-Volatile	8 bit	512 K	85 °C	-40 °C	8-XFDFN Exposed Pad	FLASH - NOR
GigaDevice Semiconductor (HK) Limited GD25LD40ETIGR	4 Mbit	1.65 V	2 V	FLASH	12 ns	50 MHz	100 µs	6 ms	Surface Mount	8-SOIC 8-SOP	3.9 mm	0.154 in	SPI - Dual I/O	Non-Volatile	8 bit	512 K	85 °C	-40 °C		FLASH - NOR (SLC)