Discrete Semiconductor Products

SI2325DS-T1-GE3

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MOSFET P-CH 150V 530MA SOT23-3

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Discrete Semiconductor Products

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MOSFET P-CH 150V 530MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2325DS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	530 mA
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs [Max]	1.2 Ohm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI2325DS-T1-GE3	530 mA	SC-59 SOT-23-3 TO-236-3	P-Channel	SOT-23-3 (TO-236)	-55 °C	150 °C	150 V	750 mW	6 V 10 V	4.5 V	1.2 Ohm	Surface Mount	20 V	12 nC	MOSFET (Metal Oxide)	510 pF
Vishay General Semiconductor - Diodes Division SI2325DS-T1-E3	530 mA	SC-59 SOT-23-3 TO-236-3	P-Channel	SOT-23-3 (TO-236)	-55 °C	150 °C	150 V	750 mW	6 V 10 V	4.5 V	1.2 Ohm	Surface Mount	20 V	12 nC	MOSFET (Metal Oxide)	510 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 150 V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources