SI2325 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 150V 530MA SOT23-3
| Part | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 530 mA | SC-59 SOT-23-3 TO-236-3 | P-Channel | SOT-23-3 (TO-236) | -55 °C | 150 °C | 150 V | 750 mW | 6 V 10 V | 4.5 V | 1.2 Ohm | Surface Mount | 20 V | 12 nC | MOSFET (Metal Oxide) | 510 pF |
 Vishay General Semiconductor - Diodes Division | 530 mA | SC-59 SOT-23-3 TO-236-3 | P-Channel | SOT-23-3 (TO-236) | -55 °C | 150 °C | 150 V | 750 mW | 6 V 10 V | 4.5 V | 1.2 Ohm | Surface Mount | 20 V | 12 nC | MOSFET (Metal Oxide) | 510 pF |