Discrete Semiconductor Products

STB36NM60N

Obsolete

MOSFET N-CH 600V 29A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 29A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB36NM60N

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	83.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2722 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	210 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	105 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Operating Temperature	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Technology	Qualification	Grade	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STB36NM60N	N-Channel	TO-263 (D2PAK)	600 V	105 mOhm	Surface Mount	150 °C	25 V	29 A	83.6 nC	210 W	MOSFET (Metal Oxide)	AEC-Q101	Automotive	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	2722 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 29A (Tc) 210W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources