Discrete Semiconductor Products
BD241C
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 40 W, 5 A, 25 ROHS COMPLIANT: YES
Discrete Semiconductor Products
BD241C
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 40 W, 5 A, 25 ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | BD241C |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 300 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 40 W |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BD241C Series
The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD242A and BD242C.