Discrete Semiconductor Products

STD7N80K5

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STMicroelectronics

POWER MOSFET, N CHANNEL, 800 V, 6 A, 0.95 OHM, TO-252 (DPAK), SURFACE MOUNT

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DocumentsSTD7N80K5 | Datasheet TN1378 +17

Discrete Semiconductor Products

STD7N80K5

Active

STMicroelectronics

POWER MOSFET, N CHANNEL, 800 V, 6 A, 0.95 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsSTD7N80K5 | Datasheet TN1378 +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD7N80K5

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STD7N80K5 Series

N-channel 800 V, 0.95 Ohm typ., 6 A MDmesh K5 Power MOSFET in DPAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
STMicroelectronics STD7N80K5	10 V	DPAK	360 pF	110 W	150 °C	-55 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 Ohm	5 V	6 A	30 V	800 V	Surface Mount	MOSFET (Metal Oxide)	13.4 nC	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	10988	$ 2.13

Description

General part information

STD7N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.