Specification	NX138AKMYL

Current - Continuous Drain (Id) @ 25°C	270 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds	15 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	2.3 W
Power Dissipation (Max)	340 mW
Rds On (Max) @ Id, Vgs	4.2 Ohm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

NX138AKM Series

60 V, N-channel Trench MOSFET

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)
Nexperia USA Inc. NX138AKMYL	1.5 V	2.5 V 10 V	4.2 Ohm	270 mA	0.6 nC	20 V	SC-101 SOT-883	Surface Mount	SOT-883	2.3 W	340 mW	MOSFET (Metal Oxide)	150 °C	-55 °C	15 pF	N-Channel	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	37109	$ 0.28

Description

General part information

NX138AKM Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.