Discrete Semiconductor Products
STGB7H60DF
LTBSTMicroelectronics
IGBTS TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 7 A HIGH SPEED
Discrete Semiconductor Products
STGB7H60DF
LTBSTMicroelectronics
IGBTS TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 7 A HIGH SPEED
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB7H60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 14 A |
| Current - Collector Pulsed (Icm) | 28 A |
| Gate Charge | 46 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 88 W |
| Reverse Recovery Time (trr) | 136 ns |
| Supplier Device Package | TO-263 (D2PAK) |
| Switching Energy | 100 µJ, 99 µJ |
| Td (on/off) @ 25°C [custom] | 30 ns |
| Td (on/off) @ 25°C [custom] | 160 ns |
| Test Condition | 400 V, 7 A, 15 V, 47 Ohm |
| Vce(on) (Max) @ Vge, Ic | 1.95 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB7H60DF Series
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.