Discrete Semiconductor Products

1N1184

Active

DIODE GEN PURP 100V 35A DO5

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 100V 35A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N1184

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed [Min]	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor 1N1184	DO-5	10 µA	Standard	35 A	Chassis Stud Mount	DO-203AB DO-5 Stud	190 °C	-65 C	100 V	200 mA 500 ns
GeneSiC Semiconductor 1N1184A	DO-5	10 µA	Standard	40 A	Chassis Stud Mount	DO-203AB DO-5 Stud	200 C	-65 C	100 V	200 mA 500 ns	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 35A Chassis, Stud Mount DO-5

Technical documentation and resources