HMC452QS16GE
LTB1 WATT POWER AMPLIFIER SMT, 0.4 - 2.2 GHZ
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HMC452QS16GE
LTB1 WATT POWER AMPLIFIER SMT, 0.4 - 2.2 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC452QS16GE |
|---|---|
| Current - Supply | 485 mA |
| Frequency [Max] | 2.2 GHz |
| Frequency [Min] | 400 MHz |
| Gain | 9 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 7.5 dB |
| P1dB | 31 dBm |
| Package / Case | 0.154 in, 3.9 mm |
| Package / Case | 16-SSOP Exposed Pad |
| RF Type | General Purpose |
| Supplier Device Package | 16-QSOP-EP |
| Test Frequency | 2.1 GHz |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Strip | 1 | $ 21.44 | <4d |
| 10 | $ 18.69 | |||
| 25 | $ 17.74 | |||
| 100 | $ 16.43 | |||
| 250 | $ 15.65 | |||
| 500 | $ 15.10 | |||
Description
General part information
HMC452QS16G Series
The HMC452QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC452QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.ApplicationsGSM, GPRS & EDGECDMA & W-CDMACATV/Cable ModemFixed Wireless & WLL
Documents
Technical documentation and resources