HMC452QS16G Series

1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz

Part	Package / Case	Package / Case	Current - Supply	Gain	Test Frequency	P1dB	Supplier Device Package	Frequency [Min]	Frequency [Max]	Mounting Type	RF Type	Noise Figure
Analog Devices Inc./Maxim Integrated HMC452QS16GETR	0.154 in 3.9 mm	16-SSOP Exposed Pad	485 mA	22.5 dBi	2.17 GHz	31 dBm	16-QSOP-EP	400 MHz	2.2 GHz	Surface Mount	CDMA GSM WCDMA	7.5 dB
Analog Devices Inc./Maxim Integrated HMC452QS16GE	0.154 in 3.9 mm	16-SSOP Exposed Pad	485 mA	9 dBi	2.1 GHz	31 dBm	16-QSOP-EP	400 MHz	2.2 GHz	Surface Mount	General Purpose	7.5 dB

Catalog

1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz

Description

The HMC452QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC452QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.ApplicationsGSM, GPRS & EDGECDMA & W-CDMACATV/Cable ModemFixed Wireless & WLL