Specification	PMPB48EPAX

Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	12.5 W, 1.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

PMPB48EPA Series

30 V, P-channel Trench MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Qualification	Power Dissipation (Max)	Supplier Device Package	Technology	Grade
Nexperia USA Inc. PMPB48EPAX	4.5 V 10 V	6-UDFN Exposed Pad	860 pF	150 °C	-55 °C	20 V	Surface Mount	4.7 A	30 V	2.5 V	26 nC	P-Channel	50 mOhm	AEC-Q101	1.7 W 12.5 W	DFN2020MD-6	MOSFET (Metal Oxide)	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	911	$ 0.87

Description

General part information

PMPB48EPA Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.