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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Type | Rds On (Max) @ Id, Vgs | Qualification | Power Dissipation (Max) | Supplier Device Package | Technology | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 4.5 V 10 V | 6-UDFN Exposed Pad | 860 pF | 150 °C | -55 °C | 20 V | Surface Mount | 4.7 A | 30 V | 2.5 V | 26 nC | P-Channel | 50 mOhm | AEC-Q101 | 1.7 W 12.5 W | DFN2020MD-6 | MOSFET (Metal Oxide) | Automotive |