Discrete Semiconductor Products

TB100ML

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RF BIPOLAR TRANSISTORS TB100/TO-92/STANDARD MARKING *

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Discrete Semiconductor Products

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RF BIPOLAR TRANSISTORS TB100/TO-92/STANDARD MARKING *

Technical Specifications

Parameters and characteristics for this part

Specification	TB100ML

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	14
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	2 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	700 V

Part	Mounting Type	Power - Max [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Package / Case
WeEn Semiconductors TB100ML	Through Hole	2 W	150 °C	14	700 V	TO-92-3	1 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	100 µA	NPN	1 A
WeEn Semiconductors TB100EP	Through Hole	2 W	150 °C	14	700 V	TO-92-3	1 V	TO-226-3 TO-92-3	100 µA	NPN	1 A	TO-226AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 700 V 1 A 2 W Through Hole TO-92-3

Technical documentation and resources

No documents available