Specification	NX3020NAKW,115

Current - Continuous Drain (Id) @ 25°C	180 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.44 nC
Input Capacitance (Ciss) (Max) @ Vds	13 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max)	260 mW, 1.1 W
Rds On (Max) @ Id, Vgs	4.5 Ohm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

NX3020NAKW Series

30 V, 180 mA N-channel Trench MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Technology	FET Type
Nexperia USA Inc. NX3020NAKW,115	180 mA	30 V	4.5 Ohm	SOT-323	13 pF	Surface Mount	2.5 V 10 V	SC-70 SOT-323	1.1 W 260 mW	150 °C	-55 °C	1.5 V	0.44 nC	20 V	MOSFET (Metal Oxide)	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	3000	$ 0.02
Digikey	N/A	5	$ 0.29

Description

General part information

NX3020NAKW Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.