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30 V, 180 mA N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, 180 mA N-channel Trench MOSFET
30 V, 180 mA N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Technology | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 180 mA | 30 V | 4.5 Ohm | SOT-323 | 13 pF | Surface Mount | 2.5 V 10 V | SC-70 SOT-323 | 1.1 W 260 mW | 150 °C | -55 °C | 1.5 V | 0.44 nC | 20 V | MOSFET (Metal Oxide) | N-Channel |