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Jantxv2N5686
Discrete Semiconductor Products

Jantxv2N5686

Unknown
Microchip Technology

BIPOLAR TRANSISTORS - BJT 80V 50A 300W NPN POWER BJT THT

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Jantxv2N5686
Discrete Semiconductor Products

Jantxv2N5686

Unknown
Microchip Technology

BIPOLAR TRANSISTORS - BJT 80V 50A 300W NPN POWER BJT THT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJantxv2N5686
Current - Collector (Ic) (Max)50 A
Current - Collector Cutoff (Max)500 µA
DC Current Gain (hFE) (Min)15
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-204AE
Package NameTO-3
Power - Max300 W
Qualification464, MIL-PRF-19500
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 1$ 481.25<1d
Microchip DirectN/A 1$ 225.6830d+
MouserN/A 50$ 481.2530d+
NewarkEach 1$ 225.6830d+
100$ 209.56
500$ 201.50

CAD

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Description

General part information

JANTXV2N5686-Transistor Series

This specification covers the performance requirements for NPN silicon, power, 2N5685 and 2N5686 transistors, complimentary to 2N5864 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/464.

Documents

Technical documentation and resources