Discrete Semiconductor Products

SSM6J501NU,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -10 A, 0.0153 Ω@4.5V, SOT-1220(UDFN6B)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -10 A, 0.0153 Ω@4.5V, SOT-1220(UDFN6B)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J501NU,LF

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	29.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	15.3 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	FET Type
Toshiba Semiconductor and Storage SSM6J501NU,LF	1 W	2600 pF	1.5 V 4.5 V	10 A	MOSFET (Metal Oxide)	15.3 mOhm	150 °C	29.9 nC	Surface Mount	20 V	6-UDFNB (2x2)	1 V	8 V	P-Channel

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General part information

P-Channel 20 V 10A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources