SSM6J501 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -10 A, 0.0153 Ω@4.5V, SOT-1220(UDFN6B)
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1 W | 2600 pF | 1.5 V 4.5 V | 10 A | MOSFET (Metal Oxide) | 15.3 mOhm | 150 °C | 29.9 nC | Surface Mount | 20 V | 6-UDFNB (2x2) | 1 V | 8 V | P-Channel |