Discrete Semiconductor Products

BUJD203AX,127

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TRANS NPN 425V 4A TO220F

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Discrete Semiconductor Products

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TRANS NPN 425V 4A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	BUJD203AX,127

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power - Max [Max]	26 W
Supplier Device Package	TO-220F
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	425 V

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Package / Case	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]
WeEn Semiconductors BUJD203AX,127	TO-220F	425 V	26 W	TO-220-3 Full Pack Isolated Tab	150 °C	10	Through Hole	NPN	4 A	2 mA
WeEn Semiconductors BUJD203AD,118	DPAK	425 V	80 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	11	Surface Mount	NPN	4 A	100 µA
WeEn Semiconductors BUJD203A,127	TO-220AB	425 V	80 W	TO-220-3	150 °C	11	Through Hole	NPN	4 A	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 425 V 4 A 26 W Through Hole TO-220F

Technical documentation and resources

No documents available