
Discrete Semiconductor Products
MBRT30030R
ActiveGeneSiC Semiconductor
DIODE MODULES SI PWR SCHOTTKY 3TWR 20-100V 300A 30P/21
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Discrete Semiconductor Products
MBRT30030R
ActiveGeneSiC Semiconductor
DIODE MODULES SI PWR SCHOTTKY 3TWR 20-100V 300A 30P/21
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MBRT30030R |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 150 A |
| Current - Reverse Leakage @ Vr | 1 mA |
| Diode Configuration | 1 Pair Common Anode |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | Three Tower |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | Three Tower |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 30 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 750 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MBRT300 Series
Diode Array 1 Pair Common Anode 30 V 150A Chassis Mount Three Tower
Documents
Technical documentation and resources