MBRT300 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOT 100V 150A 3TOWER
| Part | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Diode Configuration | Mounting Type | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 150 A | Three Tower | 1 Pair Common Cathode | Chassis Mount | 200 mA 500 ns | 100 V | 880 mV | Three Tower | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 3 mA | 150 A | Three Tower | 1 Pair Common Cathode | Chassis Mount | 200 mA 500 ns | 30 V | Three Tower | 580 mV | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 150 A | Three Tower | 1 Pair Common Cathode | Chassis Mount | 200 mA 500 ns | 80 V | 880 mV | Three Tower | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 150 A | Three Tower | 1 Pair Common Anode | Chassis Mount | 200 mA 500 ns | 30 V | 750 mV | Three Tower | |
GeneSiC Semiconductor | Reverse Polarity Schottky | -55 °C | 150 °C | 1 mA | 150 A | Three Tower | 1 Pair Common Anode | Chassis Mount | 200 mA 500 ns | 35 V | 750 mV | Three Tower | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 150 A | Three Tower | 1 Pair Common Anode | Chassis Mount | 200 mA 500 ns | 100 V | 880 mV | Three Tower | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 150 A | Three Tower | 1 Pair Common Anode | Chassis Mount | 200 mA 500 ns | 20 V | 750 mV | Three Tower | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 3 mA | 150 A | Three Tower | 1 Pair Common Anode | Chassis Mount | 200 mA 500 ns | 30 V | Three Tower | 580 mV | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 150 A | Three Tower | 1 Pair Common Cathode | Chassis Mount | 200 mA 500 ns | 200 V | 920 mV | Three Tower | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 3 mA | 150 A | Three Tower | 1 Pair Common Cathode | Chassis Mount | 200 mA 500 ns | 45 V | Three Tower | 600 mV |