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PBSS4620PA-QX
Discrete Semiconductor Products

PBSS4620PA-QX

Active
Nexperia USA Inc.

20 V, 6 A NPN LOW VCESAT TRANSISTOR

PBSS4620PA-QX
Discrete Semiconductor Products

PBSS4620PA-QX

Active
Nexperia USA Inc.

20 V, 6 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4620PA-QX
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]280
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-PowerUDFN
Power - Max [Max]500 mW
QualificationAEC-Q101
Supplier Device Package3-HUSON
Supplier Device Package [x]2
Supplier Device Package [y]2
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic275 mV
Voltage - Collector Emitter Breakdown (Max) [Max]20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.19

Description

General part information

PBSS4620PA-Q Series

NPN low VCEsattransistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.