Catalog
20 V, 6 A NPN low VCEsat transistor
Description
AI
NPN low VCEsattransistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
Beta
⌘K
20 V, 6 A NPN low VCEsat transistor
20 V, 6 A NPN low VCEsat transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Qualification | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] | Mounting Type | Transistor Type | Operating Temperature | Grade | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 275 mV | 500 mW | 20 V | AEC-Q101 | 3-HUSON | 2 | 2 | Surface Mount | NPN | 150 °C | Automotive | 3-PowerUDFN | 280 | 100 nA |